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| VN50300L/VN50300T Vishay Siliconix N-Channel 500-V (D-S) MOSFETs PRODUCT SUMMARY Part Number VN50300L 500 VN50300T V(BR)DSS Min (V) rDS(on) Max (W) 300 @ VGS = 10 V 300 @ VGS = 10 V VGS(th) (V) 1 to 4.5 1 to 4.5 ID (A) 0.033 0.022 FEATURES D D D D D Moderate On-Resistance: 240 W Secondary Breakdown Free: 520 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability BENEFITS D D D D D Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Voltage No High-Temperature "Run-Away" APPLICATIONS D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors,etc. D Telephone Mute Switches, Ringer Circuits D Power Supply, Converters D Motor Control TO-226AA (TO-92) S 1 Device Marking Front View "S" VN5 0300L xxyy "S" = Siliconix Logo xxyy = Date Code TO-236 (SOT-23) Device Marking Top View G 1 V1wll 3 S 2 D V1 = Part Number Code for VN50300T w = Week Code ll = Lot Traceability Top View G 2 D 3 Top View VN50300L VN50300T ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) _ Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg VN50300L 500 "30 0.033 0.021 0.013 0.8 0.32 156 VN50300T 500 "30 0.022 0.013 0.08 0.35 0.14 350 Unit V A W _C/W _C -55 to 150 Document Number: 70216 S-04279--Rev. D, 16-Jul-01 www.vishay.com 11-1 VN50300L/VN50300T Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 10 mA VDS = VGS, ID = 10 mA VDS = 0 V, VGS = "20 V TJ = 125_C VDS = 250 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currentb IDSS ID(on) TJ = 125_C VDS = 10 V, VGS = 10 V VGS = 10 V, ID = 10 mA Drain-Source On-Resistanceb rDS(on) VGS = 10 V, ID = 5 mA TJ = 125_C Forward Transconductanceb Common Source Output Conductanceb gfs gos VDS = 15 V, ID = 10 mA 5 15 30 250 240 450 14 0.005 mS 700 300 W 500 1 520 3.5 4.5 "100 "500 0.05 5 mA m mA nA V Symbol Test Conditions Min Typa Max Unit Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 25 V, VGS = 0 V f = 1 MHz 5 1.7 0.5 20 10 5 pF Switchingc td(on) Turn-On Time tr td(off) tf Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. VDD = 25 V, RL = 2.5 kW ID ^ 10 mA, VGEN = 10 V RG = 25 W 4.5 7 8 60 8 12 ns 20 90 VNDO50 Turn-Off Time www.vishay.com 11-2 Document Number: 70216 S-04279--Rev. D, 16-Jul-01 VN50300L/VN50300T Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics 20 VGS = 10 V 16 ID - Drain Current (mA) 6V ID - Drain Current (mA) 4 5 VGS = 7 V 5V 4.5 V Output Characteristics for Low Gate Drive 12 5V 3 8 4.5 V 4 4V 3.5 V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 2 4V 1 3.5 V 0 0 0.4 0.8 1.2 1.6 2.0 VDS - Drain-to-Source Voltage (V) Transfer Characteristics 50 VDS = 15 V 40 ID - Drain Current (mA) 25_C 30 TJ = -55_C rDS(on) - On-Resistance ( ) 700 600 500 400 300 200 100 0 2 3 4 5 6 7 VGS - Gate-Source Voltage (V) 0 0 On-Resistance vs. Gate-to-Source Voltage I D = 2 mA 10 mA 20 10 125_C 4 8 12 16 20 VGS - Gate-Source Voltage (V) On-Resistance vs. Drain Current 325 rDS(on) - Drain-Source On-Resistance ( ) (Normalized) rDS(on) - Drain-Source On-Resistance ( ) 2.25 Normalized On-Resistance vs. Junction Temperature VGS = 10 V 2.00 1.75 1.50 1.25 1.00 0.75 0.50 I D = 10 mA 5 mA 300 275 VGS = 10 V 250 225 200 0 5 10 15 20 25 -50 -10 30 70 110 150 ID - Drain Current (A) TJ - Junction Temperature (_C) Document Number: 70216 S-04279--Rev. D, 16-Jul-01 www.vishay.com 11-3 VN50300L/VN50300T Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region 10 VDS = 5 V 10 ID - Drain Current (mA) TJ = 150_C 25_C C - Capacitance (pF) 12 VGS = 0 V f = 1 MHz Capacitance 1 8 125_C 0.1 6 C iss 4 C oss -55_C 2 C rss 0.01 0 1 2 3 4 5 6 7 0 0 10 20 30 40 50 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Gate Charge 30 ID = 10 mA VGS - Gate-to-Source Voltage (V) 25 t - Switching Time (ns) 100 Load Condition Effects on Switching tf 20 td(off) 10 15 VDS = 250 V 400 V 10 tr td(on) VDD = 25 V RG = 25 W VGS = 0 to 10 V 1 5 0 0 25 50 100 150 200 Qg - Total Gate Charge (pC) 1 10 ID - Drain Current (A) 100 Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 Notes: PDM 0.01 Single Pulse 0.01 0.1 1 10 100 2. Per Unit Base = RthJA = 156_C/W 3. TJM - TA = PDMZthJA(t) 1K 10 K t1 - Square Wave Pulse Duration (sec) www.vishay.com 11-4 Document Number: 70216 S-04279--Rev. D, 16-Jul-01 |
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